Home > Publications database > Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin film memristive devices
 
Conference Presentation PreJuSER-18268
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Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin film memristive devices

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2011

DPG Frühjahrstagung
Seminar, DresdenDresden, 8 Mar 20112011-03-08


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-08
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