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000018272 084__ $$2WoS$$aPhysics, Applied
000018272 1001_ $$0P:(DE-Juel1)VDB95138$$aTappertzhofen, S.$$b0$$uFZJ
000018272 245__ $$aRedox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes
000018272 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
000018272 300__ $$a203103
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000018272 440_0 $$0562$$aApplied Physics Letters$$v99$$x0003-6951$$y20
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000018272 520__ $$aAlthough SiO2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu+ oxidation at the interface with 30 nm thick silicon dioxide thin films studied by cyclic voltammetry. This study reveals the process of anodic oxidation and subsequent reduction of oxidized Cu ions injected in the SiO2 layer with special attention to the kinetics of the redox process. We estimated the diffusion coefficient and the mobility of Cu ions in SiO2. The results gain deeper insight in the processes involved during resistive switching of Cu/SiO2 based nonvolatile memory devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662013]
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000018272 7001_ $$0P:(DE-Juel1)158062$$aMenzel, S.$$b1$$uFZJ
000018272 7001_ $$0P:(DE-Juel1)VDB85752$$aValov, I.$$b2$$uFZJ
000018272 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000018272 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3662013$$gVol. 99, p. 203103$$p203103$$q99<203103$$tApplied physics letters$$v99$$x0003-6951$$y2011
000018272 8567_ $$uhttp://dx.doi.org/10.1063/1.3662013
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