TY  - JOUR
AU  - Tappertzhofen, S.
AU  - Menzel, S.
AU  - Valov, I.
AU  - Waser, R.
TI  - Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes
JO  - Applied physics letters
VL  - 99
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-18272
SP  - 203103
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - Although SiO2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu+ oxidation at the interface with 30 nm thick silicon dioxide thin films studied by cyclic voltammetry. This study reveals the process of anodic oxidation and subsequent reduction of oxidized Cu ions injected in the SiO2 layer with special attention to the kinetics of the redox process. We estimated the diffusion coefficient and the mobility of Cu ions in SiO2. The results gain deeper insight in the processes involved during resistive switching of Cu/SiO2 based nonvolatile memory devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662013]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000297786500052
DO  - DOI:10.1063/1.3662013
UR  - https://juser.fz-juelich.de/record/18272
ER  -