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001     18272
005     20180208230642.0
024 7 _ |a 10.1063/1.3662013
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024 7 _ |a WOS:000297786500052
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024 7 _ |a 2128/7364
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037 _ _ |a PreJuSER-18272
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Tappertzhofen, S.
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245 _ _ |a Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2011
300 _ _ |a 203103
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|y 20
|v 99
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Although SiO2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu+ oxidation at the interface with 30 nm thick silicon dioxide thin films studied by cyclic voltammetry. This study reveals the process of anodic oxidation and subsequent reduction of oxidized Cu ions injected in the SiO2 layer with special attention to the kinetics of the redox process. We estimated the diffusion coefficient and the mobility of Cu ions in SiO2. The results gain deeper insight in the processes involved during resistive switching of Cu/SiO2 based nonvolatile memory devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662013]
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700 1 _ |a Menzel, S.
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700 1 _ |a Valov, I.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.3662013
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856 7 _ |u http://dx.doi.org/10.1063/1.3662013
856 4 _ |u https://juser.fz-juelich.de/record/18272/files/FZJ-18272.pdf
|y Published under German "Allianz" Licensing conditions on 2011-11-14. Available in OpenAccess from 2011-11-14
|z Published final document.
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