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@ARTICLE{Valov:18280,
      author       = {Valov, I. and Waser, R. and Jameson, J.R. and Kozicki,
                      M.N.},
      title        = {{E}lectrochemical metallization memories-fundamentals,
                      applications, prospects},
      journal      = {Nanotechnology},
      volume       = {22},
      issn         = {0957-4484},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-18280},
      pages        = {254003},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {This review focuses on electrochemical metallization memory
                      cells (ECM), highlighting their advantages as the next
                      generation memories. In a brief introduction, the basic
                      switching mechanism of ECM cells is described and the
                      historical development is sketched. In a second part, the
                      full spectra of materials and material combinations used for
                      memory device prototypes and for dedicated studies are
                      presented. In a third part, the specific thermodynamics and
                      kinetics of nanosized electrochemical cells are described.
                      The overlapping of the space charge layers is found to be
                      most relevant for the cell properties at rest. The major
                      factors determining the functionality of the ECM cells are
                      the electrode reaction and the transport kinetics. Depending
                      on electrode and/or electrolyte material electron transfer,
                      electro-crystallization or slow diffusion under strong
                      electric fields can be rate determining. In the fourth part,
                      the major device characteristics of ECM cells are explained.
                      Emphasis is placed on switching speed, forming and SET/RESET
                      voltage, R(ON) to R(OFF) ratio, endurance and retention, and
                      scaling potentials. In the last part, circuit design aspects
                      of ECM arrays are discussed, including the pros and cons of
                      active and passive arrays. In the case of passive arrays,
                      the fundamental sneak path problem is described and as well
                      as a possible solution by two anti-serial (complementary)
                      interconnected resistive switches per cell. Furthermore, the
                      prospects of ECM with regard to further scalability and the
                      ability for multi-bit data storage are addressed.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-7},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:21572191},
      UT           = {WOS:000290619900004},
      doi          = {10.1088/0957-4484/22/25/254003},
      url          = {https://juser.fz-juelich.de/record/18280},
}