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@ARTICLE{Tsuruoka:18281,
      author       = {Tsuruoka, T. and Terabe, K. and Hasegawa, T. and Valov, I.
                      and Waser, R. and Aono, M.},
      title        = {{E}ffects of {M}oisture on the {S}witching
                      {C}haracteristics of {O}xide-{B}ased, {G}apless-{T}ype
                      {A}tomic {S}witches},
      journal      = {Advanced functional materials},
      volume       = {22},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-18281},
      pages        = {70 -77},
      year         = {2012},
      note         = {This work was supported in part by the Key-Technology
                      Research Project, :Atomic Switch Programmed Device", the
                      Ministry of Education, Culture, Sports, Science, and
                      Technology (MEXT) and the Strategic Japanese-German
                      Cooperative Program, Japan Science and Technology Agency
                      (JST). T. T. acknowledges the financial support of the
                      Iketani Science and Technology Foundation.},
      comment      = {...},
      booktitle     = {...},
      abstract     = {Resistive switching memories based on the formation and
                      dissolution of a metal filament in a simple
                      metal/oxide/metal structure are attractive because of their
                      potential high scalability, low-power consumption, and ease
                      of operation. From the standpoint of the operation
                      mechanism, these types of memory devices are referred to as
                      gapless-type atomic switches or electrochemical
                      metallization cells. It is well known that oxide materials
                      can absorb moisture from the ambient air, which causes
                      shifts in the characteristics of metal-oxide-semiconductor
                      devices. However, the role of ambient moisture on the
                      operation of oxide-based atomic switches has not yet been
                      clarified. In this work, currentvoltage measurements were
                      performed as a function of ambient water vapor pressure and
                      temperature to reveal the effect of moisture on the
                      switching behavior of Cu/oxide/Pt atomic switches using
                      different oxide materials. The main findings are: i) the
                      ionization of Cu at the anode interface is likely to be
                      attributed to chemical oxidation via residual water in the
                      oxide layer, ii) Cu ions migrate along grain boundaries in
                      the oxide layer, where a hydrogen-bond network might be
                      formed by moisture absorption, and iii) the stability of
                      residual water has an impact on the ionization and migration
                      processes and plays a major role in determining the
                      operation voltages. These findings will be important in the
                      microscopic understanding of the switching behavior of
                      oxide-based atomic switches and electrochemical
                      metallization cells.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-7},
      ddc          = {620},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Multidisciplinary / Chemistry, Physical /
                      Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000298673500008},
      doi          = {10.1002/adfm.201101846},
      url          = {https://juser.fz-juelich.de/record/18281},
}