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@PHDTHESIS{Pud:185630,
author = {Pud, Sergii},
title = {{S}ilicon nanowire structures for neuronal cell
interfacing},
volume = {112},
school = {RWTH Aachen},
type = {Dr.},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2014-07056},
isbn = {978-3-95806-089-0},
series = {Schriften des Forschungszentrums Jülich. Reihe
Schlüsseltechnologien / Key Technologies},
pages = {153 S.},
year = {2015},
note = {RWTH Aachen, Diss., 2014},
abstract = {During last decade silicon nanowire (NW) field effect
transistors (FETs) attracted considerable attention of
researchers as perfect candidates for development of highly
sensitive and reliable biosensors, which are compatible with
cost-efficient CMOS technology. Recently the liquid-gated
FETs were used to demonstrate proof of principle
extracellular measurements of neuronal cells action
potential, which is of great interest regarding the large
variety of applications like monitoring of electrical
communication within neuronal networks, transmission paths
of ionic channels etc. The NWs are expected to provide an
improved contact between neuronal cells and NW surface,
which is of crucial importance for signal transduction from
the cell to the channel of the NW. However, it is still
challenging to establish robust tool for the extracellular
monitoring of electrogenic cell activity. One of the
important milestones of the research in this area is the
signal to-noise ratio (SNR), which determines the detection
limit of such type of sensors. Therefore, current work is
devoted to design, technology development and fabrication of
Si NW FET structures for neuronal cell interfacing and
characterizing of their transport properties and reliability
utilizing technique of noise spectroscopy. During the work
we study the transport properties of single Si NW FET
transistors, in order to improve understanding of the
factors influencing SNR of the NW biosensors. The results
demonstrate modulation effect of the channel current by
single trap located in the gate dielectric, which reflects
extreme charge sensitivity of the NW FET devices. Arising
from these investigations we developed and fabricated the Si
NW FET structures based on arrays of 50 NWs connected in
parallel. Fabricated liquid-gated NW FET structures are
characterized in order to find optimal regimes of operation.
The revealed front-backgate coupling effect was used to
improve the SNR of the fabricated devices by $50\%.$
According to our measurements, the developed Si NW FET
structures meet the requirements needed for extracellular
detection of the neuronal cell activity. The interface
between neuronal cells and fabricated structures was studied
using FIB technique. The results demonstrate that the cells
contact NWs without a cleft.},
keywords = {Dissertation (GND)},
cin = {ICS-8 / PGI-8},
cid = {I:(DE-Juel1)ICS-8-20110106 / I:(DE-Juel1)PGI-8-20110106},
pnm = {552 - Engineering Cell Function (POF3-552)},
pid = {G:(DE-HGF)POF3-552},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/185630},
}