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@ARTICLE{Gunkel:185644,
      author       = {Gunkel, Felix and Wicklein, Sebastian and Hoffmann-Eifert,
                      Susanne and Meuffels, Paul and Brinks, Peter and Huijben,
                      Mark and Rijnders, Guus and Waser, R. and Dittmann, Regina},
      title        = {{T}ransport limits in defect-engineered {L}a{A}l{O} $_{3}$
                      /{S}r{T}i{O} $_{3}$ bilayers},
      journal      = {Nanoscale},
      volume       = {7},
      number       = {3},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2014-07070},
      pages        = {1013-1022},
      year         = {2015},
      abstract     = {The electrical properties of the metallic interface in
                      LaAlO3/SrTiO3 (LAO/STO) bilayers are investigated with focus
                      on the role of cationic defects in thin film STO. Systematic
                      growth-control of the STO thin film cation stoichiometry
                      (defect-engineering) yields a relation between cationic
                      defects in the STO layer and electronic properties of the
                      bilayer-interface. Hall measurements reveal a
                      stoichiometry-effect primarily on the electron mobility. The
                      results indicate an enhancement of scattering processes in
                      as-grown non-stoichiometric samples indicating an increased
                      density of defects. Furthermore, we discuss the
                      thermodynamic processes and defect-exchange reactions at the
                      LAO/STO-bilayer interface determined in high temperature
                      equilibrium. By quenching defined defect states from high
                      temperature equilibrium, we finally connect equilibrium
                      thermodynamics with room temperature transport. The results
                      are consistent with the defect-chemistry model suggested for
                      LAO/STO interfaces. Moreover, they reveal an additional
                      healing process of extended defects in thin film STO.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / 523 - Controlling Configuration-Based Phenomena
                      (POF3-523)},
      pid          = {G:(DE-HGF)POF3-521 / G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000347373500023},
      doi          = {10.1039/C4NR06272H},
      url          = {https://juser.fz-juelich.de/record/185644},
}