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@ARTICLE{Soni:186402,
      author       = {Soni, Rohit and Petraru, Adrian and Meuffels, Paul and
                      Vavra, Ondrej and Ziegler, Martin and Kim, Seong Keun and
                      Jeong, Doo Seok and Pertsev, Nikolay A. and Kohlstedt,
                      Hermann},
      title        = {{G}iant electrode effect on tunnelling electroresistance in
                      ferroelectric tunnel junctions},
      journal      = {Nature Communications},
      volume       = {5},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2015-00478},
      pages        = {5414},
      year         = {2014},
      abstract     = {Among recently discovered ferroelectricity-related
                      phenomena, the tunnelling electroresistance (TER) effect in
                      ferroelectric tunnel junctions (FTJs) has been attracting
                      rapidly increasing attention owing to the emerging
                      possibilities of non-volatile memory, logic and neuromorphic
                      computing applications of these quantum nanostructures.
                      Despite recent advances in experimental and theoretical
                      studies of FTJs, many questions concerning their electrical
                      behaviour still remain open. In particular, the role of
                      ferroelectric/electrode interfaces and the separation of the
                      ferroelectric-driven TER effect from electrochemical
                      (‘redox’-based) resistance-switching effects have to be
                      clarified. Here we report the results of a comprehensive
                      study of epitaxial junctions comprising ​BaTiO3 barrier,
                      La0.7Sr0.3MnO3 bottom electrode and ​Au or ​Cu top
                      electrodes. Our results demonstrate a giant electrode effect
                      on the TER of these asymmetric FTJs. The revealed phenomena
                      are attributed to the microscopic interfacial effect of
                      ferroelectric origin, which is supported by the observation
                      of redox-based resistance switching at much higher voltages},
      cin          = {PGI-7},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000345624800035},
      pubmed       = {pmid:25399545},
      doi          = {10.1038/ncomms6414},
      url          = {https://juser.fz-juelich.de/record/186402},
}