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000186408 1001_ $$0P:(DE-HGF)0$$aTappertzhofen, Stefan$$b0$$eCorresponding Author
000186408 245__ $$aNanobattery Effect in RRAMs—Implications on Device Stability and Endurance 
000186408 260__ $$aNew York, NY$$bIEEE$$c2014
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000186408 520__ $$aThe impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts for the nanobattery effects, endurance and retention problems can be explained.
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000186408 7001_ $$0P:(DE-HGF)0$$aLinn, Eike$$b1
000186408 7001_ $$0P:(DE-HGF)0$$aBottger, Ulrich$$b2
000186408 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$ufzj
000186408 7001_ $$0P:(DE-Juel1)131014$$aValov, Ilia$$b4
000186408 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2013.2292113$$gVol. 35, no. 2, p. 208 - 210$$n2$$p208 - 210$$tIEEE electron device letters$$v35$$x1558-0563$$y2014
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