TY  - JOUR
AU  - Tappertzhofen, Stefan
AU  - Linn, Eike
AU  - Bottger, Ulrich
AU  - Waser, R.
AU  - Valov, Ilia
TI  - Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance 
JO  - IEEE electron device letters
VL  - 35
IS  - 2
SN  - 1558-0563
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2015-00484
SP  - 208 - 210
PY  - 2014
AB  - The impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts for the nanobattery effects, endurance and retention problems can be explained.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000331377500020
DO  - DOI:10.1109/LED.2013.2292113
UR  - https://juser.fz-juelich.de/record/186408
ER  -