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@ARTICLE{Tappertzhofen:186408,
      author       = {Tappertzhofen, Stefan and Linn, Eike and Bottger, Ulrich
                      and Waser, R. and Valov, Ilia},
      title        = {{N}anobattery {E}ffect in {RRAM}s—{I}mplications on
                      {D}evice {S}tability and {E}ndurance},
      journal      = {IEEE electron device letters},
      volume       = {35},
      number       = {2},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-00484},
      pages        = {208 - 210},
      year         = {2014},
      abstract     = {The impact of the recently discovered nanobattery effect on
                      the switching, the endurance, and the retention of resistive
                      random access memory devices is demonstrated. We show that
                      the relaxation of the electromotive force voltage may lead
                      to a shift of the resistance level for high resistive
                      states, which is included into device modeling. Based on the
                      extended memristive device model, which accounts for the
                      nanobattery effects, endurance and retention problems can be
                      explained.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000331377500020},
      doi          = {10.1109/LED.2013.2292113},
      url          = {https://juser.fz-juelich.de/record/186408},
}