Hauptseite > Publikationsdatenbank > Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance > print

001     186408
005     20220930130037.0
024 7 _ |a 10.1109/LED.2013.2292113
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024 7 _ |a 0741-3106
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024 7 _ |a 1558-0563
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037 _ _ |a FZJ-2015-00484
082 _ _ |a 620
100 1 _ |a Tappertzhofen, Stefan
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245 _ _ |a Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
260 _ _ |a New York, NY
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336 7 _ |a Journal Article
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520 _ _ |a The impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts for the nanobattery effects, endurance and retention problems can be explained.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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700 1 _ |a Linn, Eike
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700 1 _ |a Bottger, Ulrich
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700 1 _ |a Waser, R.
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700 1 _ |a Valov, Ilia
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773 _ _ |a 10.1109/LED.2013.2292113
|g Vol. 35, no. 2, p. 208 - 210
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856 4 _ |u https://juser.fz-juelich.de/record/186408/files/FZJ-2015-00484.pdf
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