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000186503 1001_ $$0P:(DE-HGF)0$$aStarschich, S.$$b0$$eCorresponding Author
000186503 245__ $$aChemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
000186503 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2014
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000186503 520__ $$aFerroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2.
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000186503 7001_ $$0P:(DE-HGF)0$$aGriesche, D.$$b1
000186503 7001_ $$0P:(DE-HGF)0$$aSchneller, T.$$b2
000186503 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$ufzj
000186503 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b4
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