TY  - JOUR
AU  - Starschich, S.
AU  - Griesche, D.
AU  - Schneller, T.
AU  - Waser, R.
AU  - Böttger, U.
TI  - Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
JO  - Applied physics letters
VL  - 104
IS  - 20
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-00577
SP  - 202903 
PY  - 2014
AB  - Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO2.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000337140800051
DO  - DOI:10.1063/1.4879283
UR  - https://juser.fz-juelich.de/record/186503
ER  -