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@ARTICLE{Starschich:186503,
author = {Starschich, S. and Griesche, D. and Schneller, T. and
Waser, R. and Böttger, U.},
title = {{C}hemical solution deposition of ferroelectric
yttrium-doped hafnium oxide films on platinum electrodes},
journal = {Applied physics letters},
volume = {104},
number = {20},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2015-00577},
pages = {202903},
year = {2014},
abstract = {Ferroelectric hafnium oxide films were fabricated by
chemical solution deposition with a remnant polarization of
>13 μC/cm2. The samples were prepared with
$5.2 mol. \%$ yttrium-doping and the thickness varied
from 18 nm to 70 nm. The hafnium oxide layer was
integrated into a metal-insulator-metal capacitor using
platinum electrodes. Due to the processing procedure, no
thickness dependence of the ferroelectric properties was
observed. To confirm the ferroelectric nature of the
deposited samples, polarization, capacitance, and
piezoelectric displacement measurements were performed.
However, no evidence of the orthorhombic phase was found
which has been proposed to be the non-centrosymmetric,
ferroelectric phase in HfO2.},
cin = {PGI-7},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000337140800051},
doi = {10.1063/1.4879283},
url = {https://juser.fz-juelich.de/record/186503},
}