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000186620 0247_ $$2ISSN$$a2040-3364
000186620 0247_ $$2ISSN$$a2040-3372
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000186620 1001_ $$0P:(DE-HGF)0$$aWen, Qingbo$$b0
000186620 245__ $$aSingle-source-precursor synthesis of dense SiC/HfC$_{x}$N$_{1-x}$-based ultrahigh-temperature ceramic nanocomposites
000186620 260__ $$aCambridge$$bRSC Publ.$$c2014
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000186620 520__ $$aA novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(IV) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1−x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1−x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1−x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm−1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm−1.
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000186620 7001_ $$0P:(DE-HGF)0$$aXu, Yeping$$b1
000186620 7001_ $$0P:(DE-HGF)0$$aXu, Binbin$$b2
000186620 7001_ $$0P:(DE-HGF)0$$aFasel, Claudia$$b3
000186620 7001_ $$0P:(DE-Juel1)161591$$aGuillon, Olivier$$b4
000186620 7001_ $$0P:(DE-HGF)0$$aBuntkowsky, Gerd$$b5
000186620 7001_ $$0P:(DE-HGF)0$$aYu, Zhaoju$$b6$$eCorresponding Author
000186620 7001_ $$0P:(DE-HGF)0$$aRiedel, Ralf$$b7
000186620 7001_ $$0P:(DE-HGF)0$$aIonescu, Emanuel$$b8
000186620 773__ $$0PERI:(DE-600)2515664-0$$a10.1039/C4NR03376K$$gVol. 6, no. 22, p. 13678 - 13689$$n22$$p13678 - 13689$$tNanoscale$$v6$$x2040-3372$$y2014
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