| Home > Publications database > Single-source-precursor synthesis of dense SiC/HfC$_{x}$N$_{1-x}$-based ultrahigh-temperature ceramic nanocomposites > print |
| 001 | 186620 | ||
| 005 | 20240711085648.0 | ||
| 024 | 7 | _ | |a 10.1039/C4NR03376K |2 doi |
| 024 | 7 | _ | |a 2040-3364 |2 ISSN |
| 024 | 7 | _ | |a 2040-3372 |2 ISSN |
| 024 | 7 | _ | |a WOS:000344836800049 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-00693 |
| 082 | _ | _ | |a 600 |
| 100 | 1 | _ | |a Wen, Qingbo |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Single-source-precursor synthesis of dense SiC/HfC$_{x}$N$_{1-x}$-based ultrahigh-temperature ceramic nanocomposites |
| 260 | _ | _ | |a Cambridge |c 2014 |b RSC Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1421908028_13053 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(IV) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1−x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1−x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1−x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm−1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm−1. |
| 536 | _ | _ | |a 899 - ohne Topic (POF2-899) |0 G:(DE-HGF)POF2-899 |c POF2-899 |x 0 |f POF I |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Xu, Yeping |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Xu, Binbin |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Fasel, Claudia |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Guillon, Olivier |0 P:(DE-Juel1)161591 |b 4 |
| 700 | 1 | _ | |a Buntkowsky, Gerd |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Yu, Zhaoju |0 P:(DE-HGF)0 |b 6 |e Corresponding Author |
| 700 | 1 | _ | |a Riedel, Ralf |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Ionescu, Emanuel |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1039/C4NR03376K |g Vol. 6, no. 22, p. 13678 - 13689 |0 PERI:(DE-600)2515664-0 |n 22 |p 13678 - 13689 |t Nanoscale |v 6 |y 2014 |x 2040-3372 |
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