%0 Journal Article
%A Zhang, Hehe
%A Aslam, Nabeel
%A Reiners, Marcel
%A Waser, Rainer
%A Hoffmann-Eifert, Susanne
%T Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
%J Chemical vapor deposition
%V 20
%N 7-8-9
%@ 0948-1907
%C Weinheim
%I Wiley-VCH
%M FZJ-2015-00694
%P 282 - 290
%D 2014
%X The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000342069800012
%R 10.1002/cvde.201407123
%U https://juser.fz-juelich.de/record/186621