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000186621 1001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b0
000186621 245__ $$aAtomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
000186621 260__ $$aWeinheim$$bWiley-VCH$$c2014
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000186621 520__ $$aThe resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.
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000186621 7001_ $$0P:(DE-Juel1)140489$$aAslam, Nabeel$$b1
000186621 7001_ $$0P:(DE-Juel1)138879$$aReiners, Marcel$$b2
000186621 7001_ $$0P:(DE-HGF)0$$aWaser, Rainer$$b3
000186621 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b4$$eCorresponding Author
000186621 773__ $$0PERI:(DE-600)1477693-5$$a10.1002/cvde.201407123$$gVol. 20, no. 7-8-9, p. 282 - 290$$n7-8-9$$p282 - 290$$tChemical vapor deposition$$v20$$x0948-1907$$y2014
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