TY  - JOUR
AU  - Zhang, Hehe
AU  - Aslam, Nabeel
AU  - Reiners, Marcel
AU  - Waser, Rainer
AU  - Hoffmann-Eifert, Susanne
TI  - Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
JO  - Chemical vapor deposition
VL  - 20
IS  - 7-8-9
SN  - 0948-1907
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2015-00694
SP  - 282 - 290
PY  - 2014
AB  - The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000342069800012
DO  - DOI:10.1002/cvde.201407123
UR  - https://juser.fz-juelich.de/record/186621
ER  -