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@ARTICLE{Zhang:186621,
      author       = {Zhang, Hehe and Aslam, Nabeel and Reiners, Marcel and
                      Waser, Rainer and Hoffmann-Eifert, Susanne},
      title        = {{A}tomic {L}ayer {D}eposition of {T}i{O} x /{A}l 2 {O} 3
                      {B}ilayer {S}tructures for {R}esistive {S}witching {M}emory
                      {A}pplications},
      journal      = {Chemical vapor deposition},
      volume       = {20},
      number       = {7-8-9},
      issn         = {0948-1907},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-00694},
      pages        = {282 - 290},
      year         = {2014},
      abstract     = {The resistive switching (RS) properties of a thin Al2O3
                      layer and TiOx/Al2O3 bilayers integrated into TiN/metal
                      oxide/Pt crossbar devices are investigated for future
                      memristive device (ReRAM) applications. The oxide bilayer
                      stack is realized in consecutive atomic layer deposition
                      (ALD) processes at 300 °C without any post-annealing
                      step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin
                      films are grown from dimethylaluminum isopropoxide [DMAI:
                      (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium
                      [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources,
                      and water as the oxygen source. High insulating
                      characteristics are confirmed for as-grown amorphous Al2O3
                      films with a dielectric permittivity of 8.0 and disruptive
                      field strength of about 7 MV cm−1, whereas the
                      oxygen-deficient TiOx shows semiconducting behavior. The
                      bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells
                      show a strong dependence on both oxide layer thicknesses. A
                      stable OFF/ON state resistance ratio of about 105 is
                      obtained for the bilayer structure of 5 nm TiOx and
                      3.7 nm Al2O3.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000342069800012},
      doi          = {10.1002/cvde.201407123},
      url          = {https://juser.fz-juelich.de/record/186621},
}