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| 001 | 186621 | ||
| 005 | 20210129214927.0 | ||
| 024 | 7 | _ | |a 10.1002/cvde.201407123 |2 doi |
| 024 | 7 | _ | |a 0948-1907 |2 ISSN |
| 024 | 7 | _ | |a 1521-3862 |2 ISSN |
| 024 | 7 | _ | |a WOS:000342069800012 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-00694 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Zhang, Hehe |0 P:(DE-Juel1)156365 |b 0 |
| 245 | _ | _ | |a Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1421908258_15027 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3. |
| 536 | _ | _ | |a 424 - Exploratory materials and phenomena (POF2-424) |0 G:(DE-HGF)POF2-424 |c POF2-424 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Aslam, Nabeel |0 P:(DE-Juel1)140489 |b 1 |
| 700 | 1 | _ | |a Reiners, Marcel |0 P:(DE-Juel1)138879 |b 2 |
| 700 | 1 | _ | |a Waser, Rainer |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Hoffmann-Eifert, Susanne |0 P:(DE-Juel1)130717 |b 4 |e Corresponding Author |
| 773 | _ | _ | |a 10.1002/cvde.201407123 |g Vol. 20, no. 7-8-9, p. 282 - 290 |0 PERI:(DE-600)1477693-5 |n 7-8-9 |p 282 - 290 |t Chemical vapor deposition |v 20 |y 2014 |x 0948-1907 |
| 909 | C | O | |o oai:juser.fz-juelich.de:186621 |p VDB |
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| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-524 |2 G:(DE-HGF)POF3-500 |v Controlling Collective States |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-424 |2 G:(DE-HGF)POF2-400 |v Exploratory materials and phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2014 |
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