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@ARTICLE{Niu:186664,
author = {Niu, Chengwang and Bihlmayer, Gustav and Zhang, Hongbin and
Wortmann, Daniel and Blügel, Stefan and Mokrousov, Yuriy},
title = {{F}unctionalized bismuth films: {G}iant gap quantum spin
{H}all and valley-polarized quantum anomalous {H}all states},
journal = {Physical review / B},
volume = {91},
number = {4},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2015-00737},
pages = {041303},
year = {2015},
abstract = {The search for new large band gap quantum spin Hall (QSH)
and quantum anomalous Hall (QAH) insulators is critical for
their realistic applications at room temperature. Here we
predict, based on first-principles calculations, that the
band gap of QSH and QAH states can be as large as 1.01 and
0.35 eV in an H-decorated Bi(111) film. The origin of this
giant band gap lies in both the large spin-orbit interaction
of Bi and the H-mediated exceptional electronic and
structural properties. Moreover, we find that the QAH state
also possesses the properties of a quantum valley Hall
state, thus intrinsically realizing the so-called
valley-polarized QAH effect. We further investigate the
possibility of large gap QSH and QAH states in an
H-decorated Bi(1¯10) film and
X-decorated(X=F,Cl,Br,andI)Bi(111) films.},
cin = {IAS-1 / PGI-1 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000348328200003},
doi = {10.1103/PhysRevB.91.041303},
url = {https://juser.fz-juelich.de/record/186664},
}