TY  - JOUR
AU  - Flöhr, K.
AU  - Liebmann, M.
AU  - Sladek, K.
AU  - Günel, H.Y.
AU  - Frielinghaus, R.
AU  - Haas, F.
AU  - Meyer, C.
AU  - Hardtdegen, H.
AU  - Schäpers, Th.
AU  - Grützmacher, D.
AU  - Morgenstern, M.
TI  - Manipulating InAs nanowires with submicrometer precision
JO  - Review of scientific instruments
VL  - 82
SN  - 0034-6748
CY  - [S.l.]
PB  - American Institute of Physics
M1  - PreJuSER-18713
SP  - 113705
PY  - 2011
N1  - We thank Eva Maynicke, Onder Gul, Martin Raux, and Christian Blomers for technical assistance and acknowledge financial support by the excellence initiative of the German federal government.
AB  - InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:22128982
UR  - <Go to ISI:>//WOS:000297941100025
DO  - DOI:10.1063/1.3657135
UR  - https://juser.fz-juelich.de/record/18713
ER  -