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024 | 7 | _ | |a 10.1063/1.3657135 |2 DOI |
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082 | _ | _ | |a 530 |
084 | _ | _ | |2 WoS |a Instruments & Instrumentation |
084 | _ | _ | |2 WoS |a Physics, Applied |
100 | 1 | _ | |a Flöhr, K. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a Manipulating InAs nanowires with submicrometer precision |
260 | _ | _ | |a [S.l.] |b American Institute of Physics |c 2011 |
300 | _ | _ | |a 113705 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Review of Scientific Instruments |x 0034-6748 |0 5309 |y 11 |v 82 |
500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
500 | _ | _ | |a We thank Eva Maynicke, Onder Gul, Martin Raux, and Christian Blomers for technical assistance and acknowledge financial support by the excellence initiative of the German federal government. |
520 | _ | _ | |a InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope. |
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700 | 1 | _ | |a Haas, F. |b 5 |u FZJ |0 P:(DE-Juel1)VDB102327 |
700 | 1 | _ | |a Meyer, C. |b 6 |u FZJ |0 P:(DE-Juel1)VDB14306 |
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773 | _ | _ | |a 10.1063/1.3657135 |g Vol. 82, p. 113705 |p 113705 |q 82<113705 |0 PERI:(DE-600)1472905-2 |t Review of scientific instruments |v 82 |y 2011 |x 0034-6748 |
856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3657135 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/18713/files/FZJ-18713.pdf |y Published under German "Allianz" Licensing conditions on 2011-11-16. Available in OpenAccess from 2011-11-16 |z Published final document. |
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