TY  - JOUR
AU  - Beattie, N. S.
AU  - Zoppi, G.
AU  - See, P.
AU  - Farrer, I.
AU  - Duchamp, Martial
AU  - Morrison, D. J.
AU  - Miles, R. W.
AU  - Ritchie, D. A.
TI  - Analysis of As/GaAs quantum dot solar cells using Suns-Voc measurements
JO  - Solar energy materials & solar cells
VL  - 130
SN  - 0927-0248
CY  - Amsterdam
PB  - North Holland
M1  - FZJ-2015-00940
SP  - 241-245
PY  - 2014
AB  - The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000343612600031
DO  - DOI:10.1016/j.solmat.2014.07.022
UR  - https://juser.fz-juelich.de/record/187267
ER  -