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@ARTICLE{Beattie:187267,
author = {Beattie, N. S. and Zoppi, G. and See, P. and Farrer, I. and
Duchamp, Martial and Morrison, D. J. and Miles, R. W. and
Ritchie, D. A.},
title = {{A}nalysis of {A}s/{G}a{A}s quantum dot solar cells using
{S}uns-{V}oc measurements},
journal = {Solar energy materials $\&$ solar cells},
volume = {130},
issn = {0927-0248},
address = {Amsterdam},
publisher = {North Holland},
reportid = {FZJ-2015-00940},
pages = {241-245},
year = {2014},
abstract = {The performance of InAs/GaAs quantum dot solar cells was
investigated up to an optical concentration of 500-suns. A
high temperature spacer layer between successive layers of
quantum dots was used to reduce the degradation in the open
circuit voltage relative to a control device without quantum
dots. This improvement is explained using optical data while
structural imaging of quantum dot stacks confirm that the
devices are not limited by strain. The evolution of the open
circuit voltage as a function of number of suns
concentration was observed to be nearly ideal when compared
with a high performance single junction GaAs solar cell.
Analysis of Suns-Voc measurements reveal diode ideality
factors as low as 1.16 which is indicative of a low
concentration of defects in the devices.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
pid = {G:(DE-HGF)POF2-42G41},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000343612600031},
doi = {10.1016/j.solmat.2014.07.022},
url = {https://juser.fz-juelich.de/record/187267},
}