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000187269 037__ $$aFZJ-2015-00942
000187269 041__ $$aEnglish
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000187269 1001_ $$0P:(DE-HGF)0$$aMeingast, Arno$$b0$$eCorresponding Author
000187269 245__ $$aAnalytical electron microscopy study on gallium nitride systems doped with manganese and iron
000187269 260__ $$aBristol$$bIOP Publ.$$c2015
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000187269 520__ $$aModulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii) δ-Mn-doped (Ga, δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.
000187269 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000187269 7001_ $$0P:(DE-HGF)0$$aNavarro Quezada, Andrea$$b1
000187269 7001_ $$0P:(DE-HGF)0$$aDevillers, Thibout$$b2
000187269 7001_ $$0P:(DE-Juel1)144926$$aKovacs, Andras$$b3$$ufzj
000187269 7001_ $$0P:(DE-HGF)0$$aAlbu, Mihela$$b4
000187269 7001_ $$0P:(DE-HGF)0$$aFladischer, Stefanie$$b5
000187269 7001_ $$0P:(DE-HGF)0$$aBonanni, Alberta$$b6
000187269 7001_ $$0P:(DE-HGF)0$$aKothleitner, Gerald$$b7
000187269 773__ $$0PERI:(DE-600)1361285-2$$a10.1088/0268-1242/30/3/035002$$n3$$p035002$$tSemiconductor science and technology$$v30$$x0268-1242$$y2015
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000187269 9141_ $$y2015
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