TY  - JOUR
AU  - Meingast, Arno
AU  - Navarro Quezada, Andrea
AU  - Devillers, Thibout
AU  - Kovacs, Andras
AU  - Albu, Mihela
AU  - Fladischer, Stefanie
AU  - Bonanni, Alberta
AU  - Kothleitner, Gerald
TI  - Analytical electron microscopy study on gallium nitride systems doped with manganese and iron
JO  - Semiconductor science and technology
VL  - 30
IS  - 3
SN  - 0268-1242
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2015-00942
SP  - 035002
PY  - 2015
AB  - Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii) δ-Mn-doped (Ga, δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000350631400003
DO  - DOI:10.1088/0268-1242/30/3/035002
UR  - https://juser.fz-juelich.de/record/187269
ER  -