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@ARTICLE{Meingast:187269,
author = {Meingast, Arno and Navarro Quezada, Andrea and Devillers,
Thibout and Kovacs, Andras and Albu, Mihela and Fladischer,
Stefanie and Bonanni, Alberta and Kothleitner, Gerald},
title = {{A}nalytical electron microscopy study on gallium nitride
systems doped with manganese and iron},
journal = {Semiconductor science and technology},
volume = {30},
number = {3},
issn = {0268-1242},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2015-00942},
pages = {035002},
year = {2015},
abstract = {Modulated structures of gallium nitride (GaN) doped with
transition metal ions (here Fe, Mn) are investigated by
analytical (scanning) transmission electron microscopy to
gain insight into the structural arrangement and chemical
composition of the material, known to be critically
correlated to the magnetic response and hence the
functionality of these technologically relevant systems.
Three classes of samples are considered: (i) homogeneous
(dilute) (Ga, Mn)N; (ii) δ-Mn-doped (Ga, δ-Mn)N and phase
separated (Ga, Fe)N, containing Fe-rich nanocrystals. The
combination of various microscopic techniques employed,
allows for a quantitative determination of the distribution
of the magnetic ions in the samples, providing essential
information on the structural and chemical asset of these
systems.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000350631400003},
doi = {10.1088/0268-1242/30/3/035002},
url = {https://juser.fz-juelich.de/record/187269},
}