% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Massabuau:187359,
      author       = {Massabuau, F. C.-P. and Davies, M. J. and Oehler, F. and
                      Pamenter, S. K. and Thrush, E. J. and Kappers, M. J. and
                      Kovacs, Andras and Williams, T. and Hopkins, M. A. and
                      Humphrey, C. J. and Dawson, P. and Dunin-Borkowski, Rafal
                      and Etheridge, J. and Allsopp, D. W. E. and Oliver, R. A.},
      title        = {{T}he impact of trench defects in {I}n{G}a{N}/{G}a{N} light
                      emitting diodes and implications for the "green gap"
                      problem},
      journal      = {Applied physics letters},
      volume       = {105},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-01030},
      pages        = {112110-1},
      year         = {2014},
      abstract     = {The impact of trench defects in blue InGaN/GaN light
                      emitting diodes (LEDs) has been investigated. Two mechanisms
                      responsible for the structural degradation of the multiple
                      quantum well (MQW) active region were identified. It was
                      found that during the growth of the p-type GaN capping
                      layer, loss of part of the active region enclosed within a
                      trench defect occurred, affecting the top-most QWs in the
                      MQW stack. Indium platelets and voids were also found to
                      form preferentially at the bottom of the MQW stack. The
                      presence of high densities of trench defects in the LEDs was
                      found to relate to a significant reduction in
                      photoluminescence and electroluminescence emission
                      efficiency, for a range of excitation power densities and
                      drive currents. This reduction in emission efficiency was
                      attributed to an increase in the density of non-radiative
                      recombination centres within the MQW stack, believed to be
                      associated with the stacking mismatch boundaries which form
                      part of the sub-surface structure of the trench defects.
                      Investigation of the surface of green-emitting QW structures
                      found a two decade increase in the density of trench
                      defects, compared to its blue-emitting counterpart,
                      suggesting that the efficiency of green-emitting LEDs may be
                      strongly affected by the presence of these defects. Our
                      results are therefore consistent with a model that the
                      “green gap” problem might relate to localized strain
                      relaxation occurring through defects.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
      pid          = {G:(DE-HGF)POF2-42G41},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000342995800045},
      doi          = {10.1063/1.4896279},
      url          = {https://juser.fz-juelich.de/record/187359},
}