%0 Journal Article
%A Wang, Y.
%A Chi, J.
%A Banerjee, K.
%A Grützmacher, D.
%A Schäpers, Th.
%A Lu, J.G.
%T Field effect transistor based on single crystalline InSb nanowire
%J Journal of materials chemistry
%V 21
%@ 0959-9428
%C London
%I ChemSoc
%M PreJuSER-18762
%P 2459 - 2462
%D 2011
%Z Record converted from VDB: 12.11.2012
%X InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000287092000007
%R 10.1039/c0jm03855e
%U https://juser.fz-juelich.de/record/18762