000018762 001__ 18762
000018762 005__ 20180208195934.0
000018762 0247_ $$2DOI$$a10.1039/c0jm03855e
000018762 0247_ $$2WOS$$aWOS:000287092000007
000018762 0247_ $$2Handle$$a2128/7373
000018762 037__ $$aPreJuSER-18762
000018762 041__ $$aeng
000018762 082__ $$a540
000018762 084__ $$2WoS$$aChemistry, Physical
000018762 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000018762 1001_ $$0P:(DE-HGF)0$$aWang, Y.$$b0
000018762 245__ $$aField effect transistor based on single crystalline InSb nanowire
000018762 260__ $$aLondon$$bChemSoc$$c2011
000018762 300__ $$a2459 - 2462
000018762 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000018762 3367_ $$2DataCite$$aOutput Types/Journal article
000018762 3367_ $$00$$2EndNote$$aJournal Article
000018762 3367_ $$2BibTeX$$aARTICLE
000018762 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000018762 3367_ $$2DRIVER$$aarticle
000018762 440_0 $$013161$$aJournal of Materials Chemistry$$v21$$x0959-9428$$y8
000018762 500__ $$3POF3_Assignment on 2016-02-29
000018762 500__ $$aRecord converted from VDB: 12.11.2012
000018762 520__ $$aInSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.
000018762 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000018762 588__ $$aDataset connected to Web of Science
000018762 650_7 $$2WoSType$$aJ
000018762 7001_ $$0P:(DE-HGF)0$$aChi, J.$$b1
000018762 7001_ $$0P:(DE-HGF)0$$aBanerjee, K.$$b2
000018762 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b3$$uFZJ
000018762 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Th.$$b4$$uFZJ
000018762 7001_ $$0P:(DE-Juel1)VDB97318$$aLu, J.G.$$b5$$uFZJ
000018762 773__ $$0PERI:(DE-600)1491403-7$$a10.1039/c0jm03855e$$gVol. 21, p. 2459 - 2462$$p2459 - 2462$$q21<2459 - 2462$$tJournal of materials chemistry$$v21$$x0959-9428$$y2011
000018762 8567_ $$uhttp://dx.doi.org/10.1039/c0jm03855e
000018762 8564_ $$uhttps://juser.fz-juelich.de/record/18762/files/FZJ-18762.pdf$$yPublished under German "Allianz" Licensing conditions on 2011-01-11. Available in OpenAccess from 2012-01-11$$zPublished final document.
000018762 8564_ $$uhttps://juser.fz-juelich.de/record/18762/files/FZJ-18762.jpg?subformat=icon-1440$$xicon-1440
000018762 8564_ $$uhttps://juser.fz-juelich.de/record/18762/files/FZJ-18762.jpg?subformat=icon-180$$xicon-180
000018762 8564_ $$uhttps://juser.fz-juelich.de/record/18762/files/FZJ-18762.jpg?subformat=icon-640$$xicon-640
000018762 909CO $$ooai:juser.fz-juelich.de:18762$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000018762 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000018762 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000018762 9141_ $$y2011
000018762 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000018762 915__ $$0StatID:(DE-HGF)0520$$2StatID$$aAllianz-OA
000018762 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000018762 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000018762 970__ $$aVDB:(DE-Juel1)133465
000018762 9801_ $$aFullTexts
000018762 980__ $$aVDB
000018762 980__ $$aConvertedRecord
000018762 980__ $$ajournal
000018762 980__ $$aI:(DE-82)080009_20140620
000018762 980__ $$aI:(DE-Juel1)PGI-9-20110106
000018762 980__ $$aUNRESTRICTED
000018762 980__ $$aJUWEL
000018762 980__ $$aFullTexts
000018762 981__ $$aI:(DE-Juel1)PGI-9-20110106
000018762 981__ $$aI:(DE-Juel1)VDB881