TY  - JOUR
AU  - Wang, Y.
AU  - Chi, J.
AU  - Banerjee, K.
AU  - Grützmacher, D.
AU  - Schäpers, Th.
AU  - Lu, J.G.
TI  - Field effect transistor based on single crystalline InSb nanowire
JO  - Journal of materials chemistry
VL  - 21
SN  - 0959-9428
CY  - London
PB  - ChemSoc
M1  - PreJuSER-18762
SP  - 2459 - 2462
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000287092000007
DO  - DOI:10.1039/c0jm03855e
UR  - https://juser.fz-juelich.de/record/18762
ER  -