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@ARTICLE{Wang:18762,
      author       = {Wang, Y. and Chi, J. and Banerjee, K. and Grützmacher, D.
                      and Schäpers, Th. and Lu, J.G.},
      title        = {{F}ield effect transistor based on single crystalline
                      {I}n{S}b nanowire},
      journal      = {Journal of materials chemistry},
      volume       = {21},
      issn         = {0959-9428},
      address      = {London},
      publisher    = {ChemSoc},
      reportid     = {PreJuSER-18762},
      pages        = {2459 - 2462},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {InSb nanowires with zinc-blende crystal structure and
                      precise stoichiometry are synthesized via pulsed-laser
                      chemical vapor deposition. Raman spectroscopy shows Stokes
                      and anti-Stokes peaks of transverse-optical mode with
                      asymmetric broadening. The nanowire demonstrates n-type
                      semiconductor behavior. Enhanced surface scattering due to
                      size confinement leads to reduced electron mobility.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {540},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000287092000007},
      doi          = {10.1039/c0jm03855e},
      url          = {https://juser.fz-juelich.de/record/18762},
}