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001     18762
005     20180208195934.0
024 7 _ |a 10.1039/c0jm03855e
|2 DOI
024 7 _ |a WOS:000287092000007
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024 7 _ |a 2128/7373
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037 _ _ |a PreJuSER-18762
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
100 1 _ |a Wang, Y.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Field effect transistor based on single crystalline InSb nanowire
260 _ _ |a London
|b ChemSoc
|c 2011
300 _ _ |a 2459 - 2462
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Journal of Materials Chemistry
|x 0959-9428
|0 13161
|y 8
|v 21
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Chi, J.
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700 1 _ |a Banerjee, K.
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700 1 _ |a Grützmacher, D.
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700 1 _ |a Schäpers, Th.
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700 1 _ |a Lu, J.G.
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773 _ _ |a 10.1039/c0jm03855e
|g Vol. 21, p. 2459 - 2462
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|0 PERI:(DE-600)1491403-7
|t Journal of materials chemistry
|v 21
|y 2011
|x 0959-9428
856 7 _ |u http://dx.doi.org/10.1039/c0jm03855e
856 4 _ |u https://juser.fz-juelich.de/record/18762/files/FZJ-18762.pdf
|y Published under German "Allianz" Licensing conditions on 2011-01-11. Available in OpenAccess from 2012-01-11
|z Published final document.
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914 1 _ |y 2011
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