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000018764 084__ $$2WoS$$aPhysics, Applied
000018764 1001_ $$0P:(DE-HGF)0$$aDesmarais, J.$$b0
000018764 245__ $$aMapping and statistics of ferroelectric domain boundary angles and types
000018764 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
000018764 300__ $$a162902
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000018764 440_0 $$0562$$aApplied Physics Letters$$v99$$x0003-6951$$y16
000018764 500__ $$3POF3_Assignment on 2016-02-29
000018764 500__ $$aBDH and JD recognize support from the Department of Energy, Grant No. DE-SC-0005037. JFI, TH, and DGS were supported by the Army Research Office, Grant No. W911NF-08-2-0032. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration, Contract No. DE-AC04-94AL85000.
000018764 520__ $$aFerroelectric domain orientations have been mapped using piezo-force microscopy, allowing the calculation and statistical analysis of interfacial polarization angles, the head-to-tail or head-to-head configuration, and any cross-coupling terms. Within 1 mu m(2) of an epitaxial (001)(p)-oriented BiFeO3 film, there are >40 mu m of linear domain boundary based on over 500 interfaces. 71 degrees domain walls dominate the interfacial polarization angles, with a 2:1 preference for uncharged head-to-tail versus charged head-to-head boundary types. This mapping technique offers a unique perspective on domain boundary distributions, important for ferroelectric and multiferroic applications where domain wall parameters are critical. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643155]
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000018764 65320 $$2Author$$abismuth compounds
000018764 65320 $$2Author$$adielectric polarisation
000018764 65320 $$2Author$$aelectric domain walls
000018764 65320 $$2Author$$aepitaxial layers
000018764 65320 $$2Author$$aferroelectric materials
000018764 65320 $$2Author$$aferroelectric thin films
000018764 65320 $$2Author$$amultiferroics
000018764 65320 $$2Author$$ascanning probe microscopy
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000018764 7001_ $$0P:(DE-HGF)0$$aIhlefeld, J.F.$$b1
000018764 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b2
000018764 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b3$$uFZJ
000018764 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b4
000018764 7001_ $$0P:(DE-HGF)0$$aHuey, B.D.$$b5
000018764 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3643155$$gVol. 99, p. 162902$$p162902$$q99<162902$$tApplied physics letters$$v99$$x0003-6951$$y2011
000018764 8567_ $$uhttp://dx.doi.org/10.1063/1.3643155
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