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| Hauptseite > Publikationsdatenbank > Mapping and statistics of ferroelectric domain boundary angles and types > print |
| Hauptseite > Publikationsdatenbank > Mapping and statistics of ferroelectric domain boundary angles and types > print |
| 001 | 18764 | ||
| 005 | 20180208222859.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3643155 |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Desmarais, J. |b 0 |
| 245 | _ | _ | |a Mapping and statistics of ferroelectric domain boundary angles and types |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2011 |
| 300 | _ | _ | |a 162902 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 99 |x 0003-6951 |y 16 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a BDH and JD recognize support from the Department of Energy, Grant No. DE-SC-0005037. JFI, TH, and DGS were supported by the Army Research Office, Grant No. W911NF-08-2-0032. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration, Contract No. DE-AC04-94AL85000. |
| 520 | _ | _ | |a Ferroelectric domain orientations have been mapped using piezo-force microscopy, allowing the calculation and statistical analysis of interfacial polarization angles, the head-to-tail or head-to-head configuration, and any cross-coupling terms. Within 1 mu m(2) of an epitaxial (001)(p)-oriented BiFeO3 film, there are >40 mu m of linear domain boundary based on over 500 interfaces. 71 degrees domain walls dominate the interfacial polarization angles, with a 2:1 preference for uncharged head-to-tail versus charged head-to-head boundary types. This mapping technique offers a unique perspective on domain boundary distributions, important for ferroelectric and multiferroic applications where domain wall parameters are critical. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643155] |
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| 653 | 2 | 0 | |2 Author |a bismuth compounds |
| 653 | 2 | 0 | |2 Author |a dielectric polarisation |
| 653 | 2 | 0 | |2 Author |a electric domain walls |
| 653 | 2 | 0 | |2 Author |a epitaxial layers |
| 653 | 2 | 0 | |2 Author |a ferroelectric materials |
| 653 | 2 | 0 | |2 Author |a ferroelectric thin films |
| 653 | 2 | 0 | |2 Author |a multiferroics |
| 653 | 2 | 0 | |2 Author |a scanning probe microscopy |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Ihlefeld, J.F. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Heeg, T. |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schlom, D.G. |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Huey, B.D. |b 5 |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3643155 |g Vol. 99, p. 162902 |p 162902 |q 99<162902 |t Applied physics letters |v 99 |x 0003-6951 |y 2011 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3643155 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/18764/files/FZJ-18764.pdf |y Published under German "Allianz" Licensing conditions on 2011-10-17. Available in OpenAccess from 2011-10-17 |z Published final document. |
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