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@ARTICLE{Wei:188026,
      author       = {Wei, Xiankui and Tagantsev, Alexander K. and Kvasov,
                      Alexander and Roleder, Krystian and Jia, Chun-Lin and
                      Setter, Nava},
      title        = {{F}erroelectric translational antiphase boundaries in
                      nonpolar materials},
      journal      = {Nature Communications},
      volume       = {5},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2015-01512},
      pages        = {3031},
      year         = {2014},
      abstract     = {Ferroelectric materials are heavily used in
                      electro-mechanics and electronics. Inside the ferroelectric,
                      domain walls separate regions in which the spontaneous
                      polarization is differently oriented. Properties of
                      ferroelectric domain walls can differ from those of the
                      domains themselves, leading to new exploitable phenomena.
                      Even more exciting is that a non-ferroelectric material may
                      have domain boundaries that are ferroelectric. Many
                      materials possess translational antiphase boundaries. Such
                      boundaries could be interesting entities to carry
                      information if they were ferroelectric. Here we show first
                      that antiphase boundaries in antiferroelectrics may possess
                      ferroelectricity. We then identify these boundaries in the
                      classical antiferroelectric lead zirconate and evidence
                      their polarity by electron microscopy using negative
                      spherical-aberration imaging technique. Ab initio modelling
                      confirms the polar bi-stable nature of the walls.
                      Ferroelectric antiphase boundaries could make high-density
                      non-volatile memory; in comparison with the magnetic domain
                      wall memory, they do not require current for operation and
                      are an order of magnitude thinner.},
      cin          = {PGI-5},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
      pid          = {G:(DE-HGF)POF2-42G41},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000331083800014},
      pubmed       = {pmid:24398704},
      doi          = {10.1038/ncomms4031},
      url          = {https://juser.fz-juelich.de/record/188026},
}