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000188088 0247_ $$2doi$$a10.1002/pssr.201409497
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000188088 1001_ $$0P:(DE-Juel1)145058$$aTuran, Bugra$$b0$$eCorresponding Author$$ufzj
000188088 245__ $$aNovel interconnection scheme for thin-film silicon solar modules with conductive intermediate reflector
000188088 260__ $$aWeinheim$$bWiley-VCH$$c2015
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000188088 520__ $$aIntermediate reflector layers are commonly used for light man- agement purposes in multi-junction silicon based devices containing a-Si:H top- and µc-Si:H bottom-sub-cells. A low resistance of such layers can have a severe impact on the so- lar module performance due to shunting of the bottom sub- cell by the P2 scribe. A common solution for this problem is the use of an additional scribe line. However, not only the ad- ditional processing step is disadvantageous but also the dead area losses are increased as well by the additional scribe. This work introduces a novel solar cell stripe interconnection scheme that requires only three scribing processes with simi- lar dead area losses as they would be apparent in the standard interconnection scheme. An implementation to mini modules shows no negative impact on the electrical properties and simultaneously reducing the required number of scribing steps.
000188088 536__ $$0G:(DE-HGF)POF3-121$$a121 - Solar cells of the next generation (POF3-121)$$cPOF3-121$$fPOF III$$x0
000188088 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000188088 7001_ $$0P:(DE-Juel1)140200$$aBauer, Andreas$$b1$$ufzj
000188088 7001_ $$0P:(DE-Juel1)130263$$aLambertz, Andreas$$b2$$ufzj
000188088 7001_ $$0P:(DE-Juel1)130268$$aMerdzhanova, Tsvetelina$$b3$$ufzj
000188088 7001_ $$0P:(DE-Juel1)130246$$aHaas, Stefan$$b4$$ufzj
000188088 773__ $$0PERI:(DE-600)2259465-6$$a10.1002/pssr.201409497$$gVol. 9, no. 2, p. 103 - 107$$n2$$p103 - 107$$tPhysica status solidi / Rapid research letters$$v9$$x1862-6254$$y2015
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000188088 9141_ $$y2015
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