000188101 001__ 188101
000188101 005__ 20240610121140.0
000188101 0247_ $$2doi$$a10.1038/nphoton.2014.321
000188101 0247_ $$2ISSN$$a1749-4885
000188101 0247_ $$2ISSN$$a1749-4893
000188101 0247_ $$2WOS$$aWOS:000349354300013
000188101 0247_ $$2altmetric$$aaltmetric:3079272
000188101 037__ $$aFZJ-2015-01568
000188101 041__ $$aEnglish
000188101 082__ $$a530
000188101 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding Author$$ufzj
000188101 245__ $$aLasing in direct-bandgap GeSn alloy grown on Si
000188101 260__ $$aLondon [u.a.]$$bNature Publ. Group$$c2015
000188101 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1424866099_18031
000188101 3367_ $$2DataCite$$aOutput Types/Journal article
000188101 3367_ $$00$$2EndNote$$aJournal Article
000188101 3367_ $$2BibTeX$$aARTICLE
000188101 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000188101 3367_ $$2DRIVER$$aarticle
000188101 520__ $$aLarge-scale optoelectronics integration is limited by the inability of Si to emit light efficiently1, because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser2 and the heterogeneous integration of direct-bandgap III–V lasers on Si3, 4, 5, 6, 7. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn8 without mechanically introducing strain9, 10. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For T ≤ 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action11. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal–oxide–semiconductor (CMOS) technology.
000188101 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000188101 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000188101 7001_ $$0P:(DE-HGF)0$$aGeiger, R.$$b1
000188101 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b2$$ufzj
000188101 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b3$$ufzj
000188101 7001_ $$0P:(DE-Juel1)128637$$aStoica, T.$$b4$$ufzj
000188101 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b5$$ufzj
000188101 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b6
000188101 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, M.$$b7$$ufzj
000188101 7001_ $$0P:(DE-HGF)0$$aChiussi, S.$$b8
000188101 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b9
000188101 7001_ $$0P:(DE-HGF)0$$aSigg, H.$$b10
000188101 7001_ $$0P:(DE-HGF)0$$aFaist, J.$$b11
000188101 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b12$$ufzj
000188101 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b13$$ufzj
000188101 773__ $$0PERI:(DE-600)2264673-5$$a10.1038/nphoton.2014.321$$gVol. 9, no. 2, p. 88 - 92$$n2$$p88 - 92$$tNature photonics$$v9$$x1749-4893$$y2015
000188101 8564_ $$uhttp://www.nature.com/nphoton/journal/v9/n2/abs/nphoton.2014.321.html
000188101 8564_ $$uhttps://juser.fz-juelich.de/record/188101/files/FZJ-2015-01568.pdf$$yRestricted
000188101 8767_ $$92015-06-19$$d2016-06-17$$ePage charges$$jZahlung erfolgt$$zGBP 985,95
000188101 8767_ $$92015-06-19$$d2016-06-17$$eOther$$jZahlung erfolgt$$zGBP 197,19 (Taxes)
000188101 909CO $$ooai:juser.fz-juelich.de:188101$$popenCost$$pOpenAPC$$pVDB
000188101 9141_ $$y2015
000188101 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000188101 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000188101 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000188101 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000188101 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000188101 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000188101 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000188101 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000188101 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000188101 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000188101 915__ $$0StatID:(DE-HGF)9925$$2StatID$$aIF >= 25
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138778$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130811$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b12$$kFZJ
000188101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b13$$kFZJ
000188101 9130_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen für zukünftige Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000188101 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000188101 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000188101 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x1
000188101 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x2
000188101 980__ $$ajournal
000188101 980__ $$aVDB
000188101 980__ $$aI:(DE-Juel1)PGI-9-20110106
000188101 980__ $$aI:(DE-Juel1)PGI-5-20110106
000188101 980__ $$aI:(DE-82)080009_20140620
000188101 980__ $$aUNRESTRICTED
000188101 980__ $$aAPC
000188101 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000188101 981__ $$aI:(DE-Juel1)PGI-5-20110106