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| 001 | 188101 | ||
| 005 | 20240610121140.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1038/nphoton.2014.321 |
| 024 | 7 | _ | |2 ISSN |a 1749-4885 |
| 024 | 7 | _ | |2 ISSN |a 1749-4893 |
| 024 | 7 | _ | |a WOS:000349354300013 |2 WOS |
| 024 | 7 | _ | |a altmetric:3079272 |2 altmetric |
| 037 | _ | _ | |a FZJ-2015-01568 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |0 P:(DE-Juel1)138778 |a Wirths, S. |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Lasing in direct-bandgap GeSn alloy grown on Si |
| 260 | _ | _ | |a London [u.a.] |b Nature Publ. Group |c 2015 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1424866099_18031 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently1, because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser2 and the heterogeneous integration of direct-bandgap III–V lasers on Si3, 4, 5, 6, 7. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn8 without mechanically introducing strain9, 10. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For T ≤ 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action11. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal–oxide–semiconductor (CMOS) technology. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |x 0 |f POF III |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Geiger, R. |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)161247 |a von den Driesch, N. |b 2 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128617 |a Mussler, G. |b 3 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128637 |a Stoica, T. |b 4 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128609 |a Mantl, S. |b 5 |u fzj |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Ikonic, Z. |b 6 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130811 |a Luysberg, M. |b 7 |u fzj |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Chiussi, S. |b 8 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Hartmann, J. M. |b 9 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Sigg, H. |b 10 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Faist, J. |b 11 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125569 |a Buca, D. |b 12 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)125588 |a Grützmacher, D. |b 13 |u fzj |
| 773 | _ | _ | |0 PERI:(DE-600)2264673-5 |a 10.1038/nphoton.2014.321 |g Vol. 9, no. 2, p. 88 - 92 |n 2 |p 88 - 92 |t Nature photonics |v 9 |x 1749-4893 |y 2015 |
| 856 | 4 | _ | |u http://www.nature.com/nphoton/journal/v9/n2/abs/nphoton.2014.321.html |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/188101/files/FZJ-2015-01568.pdf |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:188101 |p VDB |p OpenAPC |p openCost |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)138778 |a Forschungszentrum Jülich GmbH |b 0 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)161247 |a Forschungszentrum Jülich GmbH |b 2 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128617 |a Forschungszentrum Jülich GmbH |b 3 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128637 |a Forschungszentrum Jülich GmbH |b 4 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128609 |a Forschungszentrum Jülich GmbH |b 5 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)130811 |a Forschungszentrum Jülich GmbH |b 7 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)125569 |a Forschungszentrum Jülich GmbH |b 12 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)125588 |a Forschungszentrum Jülich GmbH |b 13 |k FZJ |
| 913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1160 |2 StatID |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |a IF >= 25 |0 StatID:(DE-HGF)9925 |2 StatID |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-5-20110106 |k PGI-5 |l Mikrostrukturforschung |x 1 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 2 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-5-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a APC |
| 981 | _ | _ | |a I:(DE-Juel1)ER-C-1-20170209 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-5-20110106 |
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