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| Hauptseite > Publikationsdatenbank > Strain-Induced Anisotropic Transport Properties of LaBaCo$_{2}$O$_{5.5+δ}$ Thin Films on NdGaO$_{3}$ Substrates > print |
| Hauptseite > Publikationsdatenbank > Strain-Induced Anisotropic Transport Properties of LaBaCo$_{2}$O$_{5.5+δ}$ Thin Films on NdGaO$_{3}$ Substrates > print |
| 001 | 188159 | ||
| 005 | 20240610121142.0 | ||
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| 037 | _ | _ | |a FZJ-2015-01620 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Liu, Ming |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Strain-Induced Anisotropic Transport Properties of LaBaCo$_{2}$O$_{5.5+δ}$ Thin Films on NdGaO$_{3}$ Substrates |
| 260 | _ | _ | |a Washington, DC |c 2014 |b Soc. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1424959716_13739 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%. |
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| 700 | 1 | _ | |a Chen, Chonglin |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1021/am502448k |g Vol. 6, no. 11, p. 8526 - 8530 |0 PERI:(DE-600)2467494-1 |n 11 |p 8526 - 8530 |t ACS applied materials & interfaces |v 6 |y 2014 |x 1944-8252 |
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