| Hauptseite > Publikationsdatenbank > Quantum Transport in Core/Shell Semiconductor Nanowires > print |
| 001 | 188601 | ||
| 005 | 20210129215222.0 | ||
| 037 | _ | _ | |a FZJ-2015-01943 |
| 100 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 0 |e Corresponding Author |
| 111 | 2 | _ | |a DPG Frühjahrstagung |c Berlin |d 2015-03-16 - 2015-03-20 |w Germany |
| 245 | _ | _ | |a Quantum Transport in Core/Shell Semiconductor Nanowires |
| 260 | _ | _ | |c 2015 |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1427383048_18238 |2 PUB:(DE-HGF) |x Invited |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a The transport properties of GaAs/InAs core/shell nanowires is investigated, where the highly conductive InAs shell is wrapped around an insulating GaAs core nanowire. At low temperatures pronounced flxperiodic (h/e) magnetoconductance oscillations are observed, when the magnetic fild is oriented along the nanowire axis. These very regular oscillations are explained by the formation of closed-loop quantumstates in the tube-like InAs shell comprising a flx periodic energy spectrum. The magnetoconductance oscillations are even observed at temperatures as high as 50K. When the GaAs/InAs core/shell nanowire is contacted by two superconducting Nb electrodes the carrier transport is governed by phase-coherent Andreev reflction processes. Here, the observed oscillation period in the magneto-transport corresponds to half a flx quantum (h/2e). |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |x 0 |f POF III |
| 700 | 1 | _ | |a Haas, Fabian |0 P:(DE-Juel1)140174 |b 1 |
| 700 | 1 | _ | |a Zellekens, Patrick |0 P:(DE-Juel1)145960 |b 2 |
| 700 | 1 | _ | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 3 |
| 700 | 1 | _ | |a Wenz, Tobias |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Günel |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Gül |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Demarina, Nataliya |0 P:(DE-Juel1)125576 |b 7 |
| 700 | 1 | _ | |a Lepsa, Mihail Ion |0 P:(DE-Juel1)128603 |b 8 |
| 700 | 1 | _ | |a Lüth, Hans |0 P:(DE-Juel1)128608 |b 9 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 10 |
| 773 | _ | _ | |y 2015 |
| 909 | C | O | |o oai:juser.fz-juelich.de:188601 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128634 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)140174 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)145960 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)141766 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)156192 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125576 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)128603 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 9 |6 P:(DE-Juel1)128608 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)125588 |
| 913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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