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| 001 | 188603 | ||
| 005 | 20210129215223.0 | ||
| 037 | _ | _ | |a FZJ-2015-01945 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 0 |e Corresponding Author |
| 111 | 2 | _ | |a Workshop "Spin coherence and relaxation phenomena in low-dimensional systems |c Aachen |d 2015-03-25 - 2015-03-27 |w Germany |
| 245 | _ | _ | |a Magneto-transport measurements on 3-dimensional topological insulator layers and wirestructures |
| 260 | _ | _ | |c 2015 |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1427383088_17663 |2 PUB:(DE-HGF) |x Invited |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a Three-dimensional topological insulators, such as Bi2Te3 and Sb2Te3, are known to host surface states that are protected against perturbations by properties of the bulk. With unique features like spinmomentum locking, suppressed backscattering and Majorana fermions these systems are very attractive candidates for future applications in spintronics as well as quantum informationprocessing. In order to gain information on the transport properties on molecular beam epitaxy grown layers of 3-dimensional topological insulators, the magnetoconductance was measured at lowtemperatures. The pronounced weak antilocalization effect found in all our samples confirmed the presence of strong spin-orbit coupling. However, beside the surface channel a considerable bulkconductance contribution was present due to intrinsic doping. Different concepts are discussed, i.e. ternary layers or pn junctions, to reduce this bulk conductance contribution. Finally, transportstudies on lithographically defined wire structures will be presented. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |x 0 |f POF III |
| 700 | 1 | _ | |a Weyrich, Christian |0 P:(DE-Juel1)145705 |b 1 |
| 700 | 1 | _ | |a Arango, Yulieth |0 P:(DE-Juel1)151156 |b 2 |
| 700 | 1 | _ | |a Schall, Melissa |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Heider, Tristan |0 P:(DE-Juel1)165724 |b 4 |
| 700 | 1 | _ | |a Kampmeier, Jörn |0 P:(DE-Juel1)145467 |b 5 |
| 700 | 1 | _ | |a Lanius, Martin |0 P:(DE-Juel1)156236 |b 6 |
| 700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 7 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 8 |
| 773 | _ | _ | |y 2015 |
| 909 | C | O | |o oai:juser.fz-juelich.de:188603 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128634 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)145705 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)151156 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)165724 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)145467 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)156236 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)128617 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)125588 |
| 913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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