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000189054 0247_ $$2doi$$a10.1088/0268-1242/30/5/055003
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000189054 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding Author
000189054 245__ $$aTernary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs
000189054 260__ $$aBristol$$bIOP Publ.$$c2015
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000189054 520__ $$aThe formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap group IV semiconductors. (Si)GeSn layers were pseudomorphically grown on Ge buffered Si(001) by reduced pressure chemical vapor deposition. Ni, i.e. the metal of choice for source/drain metallization in Si nanoelectronics, is employed for the stano-(silicon)-germanidation of highly strained (Si)GeSn alloys. We show that NiGeSn on GeSn layers change phase from well-oriented Ni5(GeSn)3 to poly-crystalline Ni1(GeSn)1 at very low annealing temperatures. A large range of GeSn compositions with Sn concentrations up to 12 at.%, and SiGeSn ternaries with large Si and Sn compositions from 18%/3% to 4%/11% are investigated. In addition, the sheet resistance, of importance for electronic or optoelectronic device contacts, is quantified. The incorporation of Si extends the thermal stability of the resulting low resistive quaternary phase compared to their NiGeSn counterparts.
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000189054 7001_ $$0P:(DE-Juel1)159320$$aTroitsch, René$$b1
000189054 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b2
000189054 7001_ $$0P:(DE-HGF)0$$aHartmann, J-M$$b3
000189054 7001_ $$0P:(DE-HGF)0$$aZaumseil, P.$$b4
000189054 7001_ $$0P:(DE-HGF)0$$aSchroeder, T.$$b5
000189054 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b6
000189054 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b7
000189054 773__ $$0PERI:(DE-600)1361285-2$$a10.1088/0268-1242/30/5/055003$$gVol. 30, no. 5, p. 055003 -$$n5$$p055003$$tSemiconductor science and technology$$v30$$x1361-6641$$y2015
000189054 8564_ $$uhttp://iopscience.iop.org/0268-1242/30/5/055003/
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