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@ARTICLE{Wirths:189054,
      author       = {Wirths, S. and Troitsch, René and Mussler, G. and
                      Hartmann, J-M and Zaumseil, P. and Schroeder, T. and Mantl,
                      S. and Buca, D.},
      title        = {{T}ernary and quaternary {N}i({S}i){G}e({S}n) contact
                      formation for highly strained {G}e p- and n-{MOSFET}s},
      journal      = {Semiconductor science and technology},
      volume       = {30},
      number       = {5},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2015-02296},
      pages        = {055003},
      year         = {2015},
      abstract     = {The formation of new ternary NiGeSn and quaternary NiSiGeSn
                      alloys has been investigated to fabricate metallic contacts
                      on high Sn content, potentially direct bandgap group IV
                      semiconductors. (Si)GeSn layers were pseudomorphically grown
                      on Ge buffered Si(001) by reduced pressure chemical vapor
                      deposition. Ni, i.e. the metal of choice for source/drain
                      metallization in Si nanoelectronics, is employed for the
                      stano-(silicon)-germanidation of highly strained (Si)GeSn
                      alloys. We show that NiGeSn on GeSn layers change phase from
                      well-oriented Ni5(GeSn)3 to poly-crystalline Ni1(GeSn)1 at
                      very low annealing temperatures. A large range of GeSn
                      compositions with Sn concentrations up to 12 $at.\%,$ and
                      SiGeSn ternaries with large Si and Sn compositions from
                      $18\%/3\%$ to $4\%/11\%$ are investigated. In addition, the
                      sheet resistance, of importance for electronic or
                      optoelectronic device contacts, is quantified. The
                      incorporation of Si extends the thermal stability of the
                      resulting low resistive quaternary phase compared to their
                      NiGeSn counterparts.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355212600007},
      doi          = {10.1088/0268-1242/30/5/055003},
      url          = {https://juser.fz-juelich.de/record/189054},
}