%0 Journal Article
%A Wirths, Stephan
%A Stange, Daniela
%A Pampillon, Maria
%A Tiedemann, Andreas
%A Mussler, Gregor
%A Fox, Alfred
%A Breuer, Uwe
%A Baert, Bruno
%A San Andrés, Enrique
%A Nguyen, Ngoc D.
%A Hartmann, Jean-Michel
%A Ikonic, Zoran
%A Mantl, Siegfried
%A Buca, Dan Mihai
%T High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
%J ACS applied materials & interfaces
%V 7
%N 1
%@ 1944-8252
%C Washington, DC
%I Soc.
%M FZJ-2015-02297
%P 62 - 67
%D 2015
%X We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance–voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000348085200008
%$ pmid:25531887
%R 10.1021/am5075248
%U https://juser.fz-juelich.de/record/189055