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000189055 1001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b0
000189055 245__ $$aHigh- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
000189055 260__ $$aWashington, DC$$bSoc.$$c2015
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000189055 520__ $$aWe present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance–voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
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000189055 7001_ $$0P:(DE-Juel1)161180$$aStange, Daniela$$b1
000189055 7001_ $$0P:(DE-Juel1)159112$$aPampillon, Maria$$b2
000189055 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b3
000189055 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b4
000189055 7001_ $$0P:(DE-Juel1)125583$$aFox, Alfred$$b5
000189055 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b6
000189055 7001_ $$0P:(DE-HGF)0$$aBaert, Bruno$$b7
000189055 7001_ $$0P:(DE-HGF)0$$aSan Andrés, Enrique$$b8
000189055 7001_ $$0P:(DE-HGF)0$$aNguyen, Ngoc D.$$b9
000189055 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b10
000189055 7001_ $$0P:(DE-HGF)0$$aIkonic, Zoran$$b11
000189055 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b12
000189055 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b13$$eCorresponding Author$$ufzj
000189055 773__ $$0PERI:(DE-600)2467494-1$$a10.1021/am5075248$$gVol. 7, no. 1, p. 62 - 67$$n1$$p62 - 67$$tACS applied materials & interfaces$$v7$$x1944-8252$$y2015
000189055 8564_ $$uhttp://pubs.acs.org/doi/abs/10.1021/am5075248
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